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TWINX10244400C25PT Won't run @ rated specs.


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DFI LANPARTY nF4 SLI-DR (Tmod's 704-2BTA BIOS) VC-RE Chipset Cooler

AMD Opteron 170 CCBWE 0609 FPAW AMD Heat Pipe Cooler / CoolerMaster 80mm fan @ 1.45v 2750MHz

2x512MB Corsair XMS TWINX10244400C25PT (Samsung TCCD on BrainPower PCB)1T-2.5-4-4-8 275MHz

Rosewill GeForce 6600 256Mb SLI version 84.21 drivers

Western Digital Caviar SE 200GB SATA II 3Gb/s

SilverStone Strider ST60F Modular 600W SLI PSU

HL DT-ST DVD-ROM GDR8160B

 

..............................................

 

I can't get this setup to pass stability tests, at it's rated speed. I need some help with the advanced timing settings. Both CPU and RAM test fine seperately, but not together.

 


Genie BIOS Settings:

FSB Bus Frequency - 275
LDT/FSB Frequency Ration - 3x
CPU/FSB Frequency Ratio - 7x
PCI eXpress Frequency - 100Mhz

CPU VID StartUp Value - Startup

CPU VID Control - 1.45v
CPU VID Special Control - AUTO
LDT Voltage Control - 1.30v
Chip Set Voltage Control - 1.60v
DRAM Voltage Control - 2.8v

DRAM Configuration Settings:

DRAM Frequency Set - 200 (DRAM/FSB:1/01)
Command Per Clock (CPC) - Enable
CAS Latency Control (Tcl) - 2.5
RAS# to CAS# delay (Trcd) - 04 Bus Clocks
Min RAS# active time (Tras) - 08 Bus Clocks
Row precharge time (Trp) - 04 Bus Clocks
Row Cycle time (Trc) - 12 Bus Clocks
Row refresh cyc time (Trfc) - 19 Bus Clocks
Row to Row delay (Trrd) - 03 Bus Clocks
Write recovery time (Twr) - 02 Bus Clocks
Write to Read delay (Twtr) - 02 Bus Clocks
Read to Write delay (Trwt) - 04 Bus Clocks
Refresh Period (Tref) - 2560 Cycles
Write CAS Latency (Twcl) - 05 Bus Clocks
DRAM Bank Interleave - Enabled

DQS Skew Control - Auto
DQS Skew Value - 0
DRAM Drive Strength - Weak4
DRAM Data Drive Strength - Level 2
Max Async Latency - 9.0 Nano Seconds
DRAM Response Time - Fast
Read Preamble Time - 6.0 Nano Seconds
IdleCycle Limit - 256 Cycles
Dynamic Counter - Disable
R/W Queue Bypass - 16 x
Bypass Max - 04 x
32 Byte Granularity - Disable(4 Bursts)
[/Code]

 

http://i67.photobucket.com/albums/h287/reelfiles/Screenshots/5000.jpg

 

[size=7][color=Red]..............................................[/color][/size]

 

 

 

To prove it's not my CPU's overclock limiting me (even though it is on a [color=Red][b]7x[/b][/color] multi atm);

 

[Code]
[b]Genie BIOS Settings:[/b]

FSB Bus Frequency - 275
LDT/FSB Frequency Ration - 3x
CPU/FSB Frequency Ratio - 10x
PCI eXpress Frequency - 100Mhz

CPU VID StartUp Value - Startup

CPU VID Control - 1.45v
CPU VID Special Control - AUTO
LDT Voltage Control - 1.30v
Chip Set Voltage Control - 1.60v
DRAM Voltage Control - 2.60v[/color]

[b]DRAM Configuration Settings:[/b]


DRAM Frequency Set - 100(Mhz)(1/02).
Command Per Clock (CPC) - Auto
CAS Latency Control (Tcl) - 2.5
RAS# to CAS# delay (Trcd) - 04 Bus Clocks
Min RAS# active time (Tras) - 08 Bus Clocks
Row precharge time (Trp) - 04 Bus Clocks
Row Cycle time (Trc) - 09 Bus Clocks
Row refresh cyc time (Trfc) - 19 Bus Clocks
Row to Row delay (Trrd) - 03 Bus Clocks
Write recovery time (Twr) - 02 Bus Clocks
Write to Read delay (Twtr) - 02 Bus Clocks
Read to Write delay (Trwt) - 04 Bus Clocks
Refresh Period (Tref) - 2560 Cycles
Write CAS Latency (Twcl) - 05 Bus Clocks
DRAM Bank Interleave - Enabled

DQS Skew Control - Auto
DQS Skew Value - 0
DRAM Drive Strength - Weak4
DRAM Data Drive Strength - Level 2
Max Async Latency - 9.0 Nano Seconds
DRAM Response Time - Fast
Read Preamble Time - 6.0 Nano Seconds
IdleCycle Limit - 256 Cycles
Dynamic Counter - Disable
R/W Queue Bypass - 16 x
Bypass Max - 04 x
32 Byte Granularity - Disable(4 Bursts)
[/Code]

 

 

 

I started upping HTT\FSB in 10MHz on default vcore, until I hit 250MHz x 10, then I had to up the vcore to 1.45v in order to reach 275MHz.

 

Note: set to 1.45v reads 1.42v in bios and 1.39v-1.4v in ITE Smartguardian.

 

http://i67.photobucket.com/albums/h287/reelfiles/Screenshots/Test2750137stable.jpg

 

 

 

[size=7][color=Red]..............................................[/color][/size]

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yea i have the same problems as well, although i own a DFI NF3 Ultra and am running an amd opteron 146. Having trouble running at 250mhz stable. Computer keeps on resetting even with a lower multiplier. So can anyone shed some light on this matter?
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Passed 12 hours of Prime95!

 

http://i67.photobucket.com/albums/h287/reelfiles/Screenshots/RAMtest275prime.jpg

 

 

..............................................

 

Next: consolidate CPU and RAM settings (raise CPU multi to 10x), and retest with dual Prime95.

 

Prime95 failed at 4 hours 14 minutes. Not cool.....:(

 

but SuperPi 32M passes fine;

 

http://i67.photobucket.com/albums/h287/reelfiles/Screenshots/superpipass2751on1.jpg

 


Genie BIOS Settings:

FSB Bus Frequency - 275
LDT/FSB Frequency Ration - 3x
CPU/FSB Frequency Ratio - 10x
PCI eXpress Frequency - 100Mhz

CPU VID StartUp Value - Startup

CPU VID Control - 1.45v
CPU VID Special Control - AUTO
LDT Voltage Control - 1.30v
Chip Set Voltage Control - 1.60v
DRAM Voltage Control - 2.9v +.03 = 2.93v

DRAM Configuration Settings:

DRAM Frequency Set - 200 (DRAM/FSB:1/01)
Command Per Clock (CPC) - Enable
CAS Latency Control (Tcl) - 2.5
RAS# to CAS# delay (Trcd) - 04 Bus Clocks
Min RAS# active time (Tras) - 08 Bus Clocks
Row precharge time (Trp) - 04 Bus Clocks
Row Cycle time (Trc) - 9 Bus Clocks
Row refresh cyc time (Trfc) - 19 Bus Clocks
Row to Row delay (Trrd) - 03 Bus Clocks
Write recovery time (Twr) - 03 Bus Clocks
Write to Read delay (Twtr) - 02 Bus Clocks
Read to Write delay (Trwt) - 04 Bus Clocks
Refresh Period (Tref) - 2560 Cycles
Write CAS Latency (Twcl) - 05 Bus Clocks
DRAM Bank Interleave - Enabled

DQS Skew Control - Auto
DQS Skew Value - 128
DRAM Drive Strength - Weak4
DRAM Data Drive Strength - Level 2
Max Async Latency - 9.0 Nano Seconds
DRAM Response Time - Fast
Read Preamble Time - 6.0 Nano Seconds
IdleCycle Limit - 256 Cycles
Dynamic Counter - Disable
R/W Queue Bypass - 16 x
Bypass Max - 04 x
32 Byte Granularity - Disable(4 Bursts)
[/Code]

 

 

[size=7][color=Red]..............................................[/color][/size]

 

I am going to up the Vcore, then prime again. I am worried about using 2.93v on the Vdimm, as these sticks are rated for 2.75v at their "stock" speed. It seems to be the only way to get them stable. Shouls I RMA the RAM?

 

A little input from a Corsair rep would be appreciated, this is a quite rediculous problem for a $250 set of RAM.

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fritz, please start your own thread.

 

reelfile, please be patient, it's only 10:30 AM in California, and it hasn't even been 24 hours since the thread was started. If you desire an immediate response, call them @ 1-88-222-4346. Also, a moderator isn't what you want, you want a Corsair rep, e.g. Ram Guy.

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Ok, thank you.

The machine is actually running dual Prime95 for 6+ hours at the moment. 1T-2.5-4-4-8 @ 275MHZ @ 2.93v. Do you think dropping to 2T will let me reduce the Vdimm? I am going to wait until Prime95 finishes a 12 hour run or crashes, then I will try your settings. How much of a performance hit should I expect from droppin to 2T?

 

The motherboard is not known to have issues with 275MHz @1T, actually a lot of tweakers push them past 300MHz. You should be familiar with the Lanparty SLI-DR, as it may well be the most successful overclocking nF4 board from DFI.

The Opteron 170 has been thoroughly tested at and beyond 275MHz, and does not seem to be the cause of the issue.

 

Do you have any information regarding the advanced Dram timing settings for my bios? (Tmod's 704-2BTA),which is the info that I really need. DFI discourages leaving the Dram settings on AUTO, with a few exceptions. I can't get SuperPi or Prime95 to complete on AUTO settings anyway, so they are useless to me. The Dram settings I posted earlier, are as close as I got to getting her stable.

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  • Corsair Employees
To see if the 1T and 2T stability issue is caused by Ram or CPU/Motherboard, run memtest86 if errors in 1-4 is cause d by Ram if 5-8 is caused by CPU/Motherboard. 2T will reduce benchmark scores by 5-11%. In real life apps unnoticeable.
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Yes, I posted a screenshot earlier. The CPU was on 7x multi;

 

http://i67.photobucket.com/albums/h287/reelfiles/Screenshots/5000.jpg

 

Is this RAM rated for 1T or 2T @ 275MHz, neither Corsair's site or the specification sheet show that info.

 

Via the timings link in your signature;

 

TWINX1024-4400C25

Motherboard make and model: Asus P4C800/-E

Each pair is tested and packaged together using the following settings:

CPU External Frequency: Manually set to 275MHz

DRAM Clock: Manually set to 1:1 or 400MHz

SDRAM CAS Latency: 2.5T

SDRAM RAS to CAS Delay (tRCD): 4T

SDRAM Row Precharge (tRP): 4T

SDRAM Active to Precharge Delay (tRAS): 8T

SDRAM Bank Interleave: 4 Bank

SDRAM VDIMM: 2.75

All other settings are motherboard defaults.

Maximum recommended VDIMM: 2.9

 

I don't see it there either.

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  • Corsair Employees
We do not rate these at 1T for specific reason. 95% of motherboards will not be able to run at 275MHZ 1T. If we specify it at 1T user will be on this issue on and on. Like I asked earlier set it at 275MHZ 1T and see which test it fails in. Test 1-4 is memory and 5-8 CPU or motherboard related. We usually test at 2T but I have seen users run at 1T stable.
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... set it at 275MHZ 1T and see which test it fails in. Test 1-4 is memory and 5-8 CPU or motherboard related. We usually test at 2T but I have seen users run at 1T stable.

 

Ok I will do that, then I'll take some snapshots to show you. The tests I ran were all @1T, btw. I have to wait till 8pm eastern to do so, though, as I am still working on that 12 hour Prime run.

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SuperPi fails within 30secs with those settings @ 1T or 2T with the CPU on 10x or 7x multi. So it has to be the voltage or the advanced timings that are messing me up. I am guessing that 2.93v is just enough to let the memory pass certain tests even though the timings are messed up.
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Which ones of these would you recommend? I was mostly trying the 15.6us ones, aren't those for my RAM?

 

Refresh Period(tREF)

 

Settings = Auto, 0032-4708 in variable increments.

 

1552= 100mhz(?.?us)

2064= 133mhz(?.?us)

2592= 166mhz(?.?us)

3120= 200mhz(?.?us)(seems to be a/ Bh-5,6 sweet spot at 250+mhz)

---------------------

3632= 100mhz(?.?us)

4128= 133mhz(?.?us)

4672= 166mhz(?.?us)

0064= 200mhz(?.?us)

---------------------

0776= 100mhz(?.?us)

1032= 133mhz(?.?us)

1296= 166mhz(?.?us)

1560= 200mhz(?.?us)

---------------------

1816= 100mhz(?.?us)

2064= 133mhz(?.?us)

2336= 166mhz(?.?us)

0032= 200mhz(?.?us)

---------------------

0388= 100mhz(15.6us)

0516= 133mhz(15.6us)

0648= 166mhz(15.6us)

0780= 200mhz(15.6us)

---------------------

0908= 100mhz(7.8us)

1032= 133mhz(7.8us)

1168= 166mhz(7.8us)

0016= 200mhz(7.8us)

---------------------

1536= 100mhz(3.9us)

2048= 133mhz(3.9us)

2560= 166mhz(3.9us)

3072= 200mhz(3.9us)

---------------------

3684= 100mhz(1.95us)

4196= 133mhz(1.95us)

4708= 166mhz(1.95us)

0128= 200mhz(1.95us)

 

Paraphrased From Adrian Wong’s site: http://www.rojakpot.com/

 

”This BIOS feature allows you to set the refresh interval of the memory chips. There are (several) different settings as well as an Auto option. If the Auto option is selected, the BIOS will query the memory modules' SPD chips and use the lowest setting found for maximum compatibility. For better performance, you should consider increasing the Refresh Interval from the default values (15.6 µsec for 128Mbit or smaller memory chips and 7.8 µsec for 256Mbit or larger memory chips) up to 128 µsec. Please note that if you increase the Refresh Interval too much, the memory cells may lose their contents. Therefore, you should start with small increases in the Refresh Interval and test your system after each hike before increasing it further. If you face stability problems upon increasing the refresh interval, reduce the refresh interval step by step until the system is stable.

 

From Sierra at ABXzone:

The information below is taken from an old RAM guide. In a nutshell a memory module is made up of electrical cells. The refresh process recharges these cells, which are arranged on the chips in rows. The refresh cycle refers to the number of rows that must be refreshed.

 

"Periodically the charge stored in each bit must be refreshed or the charge will decay and the value of the bit of data will be lost. DRAM (Dynamic Random Access Memory) is really just a bunch of capacitors that can store energy in an array of bits. The array of bits can be accessed randomly. However, the capacitors can only store this energy for a short time before it discharges it. Therefore DRAM must be refreshed (re-energizing of the capacitors) every 15.6µs (a microsecond equals 10-6 seconds) per row. Each time the capacitors are refreshed the memory is re-written. For this reason DRAM is also called volatile memory. Using the RAS-ONLY refresh (ROR) method, the refresh is done is a systematic manner, each column is refreshed row by row in sequence. In a typical EDO module each row takes 15.6µs to refresh. Therefore in a 2K module the refresh time per column would be 15.6µs x 2048 rows = 32ms (1 millisecond equals 10-6 seconds). This value is called the tREF. It refers to the refresh interval of the entire array."

 

Here is an interesting discussion of tREF on the DFI forum:

 

http://www.dfi-street.com/forum/showthread.php?t=10411

 

Slight Influence on Stability/Bandwidth.

 

Suggested Settings for DFI: It appears that tREF, like the tRAS, is not an exact science. It also seems that the 15.6us, and 3.9us settings work well, and that the 1.95us settings give lower bandwidth. The unknown (?.?us) are shots in the dark. A lot of users are finding setting 3120= 200mhz(?.?us) gives the best balance of performance, and stability, but this will probably vary greatly from one type of RAM to another.

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